PART |
Description |
Maker |
CM600DY-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HB-66H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM100HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
CM800HB-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
IRG4PC40FPBF IRG4PC40FPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR INSULATED GATE BIPOLARTRANSISTOR Fast Speed IGBT
|
International Rectifier
|
AP20GT60I AP20GT60I14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp.
|
AP50G60W-HF AP50G60W-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
AP30G120BSW-HF AP30G120BSW-HF-14 |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD High Speed Switching
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
IRGBC20K |
Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A)
|
IRF[International Rectifier]
|
NTE3303 NTE3302 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|
NTE3320 |
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch
|
NTE[NTE Electronics]
|